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First rubber transistors created in Japan - VIDEO PDF Print E-mail
Wednesday, 26 August 2015 14:09
Japanese researchers from the National Institute of AIST (National Institute of Advanced Industrial Science and Technology) have developed a new type of transistors that are soft, supple and kept sufficiently strong mechanical stress. Most of the components of these transistors is made of rubber, silicone gel, and an elastic plastic. Because of this transistor without loss of efficiency can withstand mechanical loads, they can be immersed in water and they can come women in high-heeled stilettos. All this will be made on the basis of such transistors sensors that will be placed on clothing or directly on the floor of residential, office and industrial premises. The transistor is produced by forming the gate electrodes, drain, source, and channel of the dielectric layer in a silicon rubber screen whose thickness does not exceed 1 millimeter. The size of each transistor is 1 by 1 millimeter and the length and width of its channel - 700 and 50 micrometers, respectively. For the formation of each electrode of the transistor using a composite material whose conductivity has been enhanced by the introduction of carbon nanotubes in the composition of the material. The dielectric layer separating the gate from the channel is made of a polymeric gel material impregnated with an ionic liquid, and the channel is a path of carbon nanotubes arranged chaotically, whereby the track properties correspond to the properties of the semiconductor material. The gel-like insulating layer acts not as an oxide layer in a conventional FET. When the gate electric potential is applied, ions begin to move and create additional ion insulating layer which plays the role of the dielectric. The ratio of on-state current to the current in the closed state of the rubber at low and transistor 104 is at a gate voltage of -2 to 1 volt. And these figures do not greatly change in tension of the transistor and then returning it to its original state. Some changes in the parameters have begun to appear only after 1000 strain, when the transistor is stretched by 40-50 percent of its original size. Moreover, the performance of the transistor rubber virtually unchanged when it came to the woman shoes with high stiletto heels. The emerging and the pressure was 25 kilograms per square centimeter, and is 70 percent higher than the pressure exerted on the road bus laden vehicle. "Schemes with rubber transistors continue to function even when they are folded or bent at an acute angle" - says AtsUKo Sekiguchi (AtsUKo Sekiguchi), one of the researchers - "This will allow the use of such schemes in even the most difficult conditions, on clothing, on the walls and floorings in industrial facilities, roads and in many other places where working conditions are far from ideal. "

НАЖМИТЕ ЗДЕСЬ ДЛЯ ПРОСМОТРА ВСЕГО СПИСКА НОВОСТЕЙ О НЕОБЫЧНЫХ ЯВЛЕНИЯХ>>>

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